Toshiba Expands GaN HEMT Product Family With Power Amplifiers for Ku-band SATCOM and X-Band Radar Applications

IRVINE, Calif. , June 16 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor High Electron Mobility Transistors (HEMTs), developed by Toshiba Corp. (Toshiba), to its...

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue, April 2008 ). For additional company and product information, please visit

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba's "Handling Guide for Semiconductor Devices," or "Toshiba Semiconductor Reliability Handbook." This information is available at, or from your TAEC representative.

Visit TAEC in IEEE MTT-S booth #1701

(1) For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.

(2) with a supply voltage of 24V at 25 degrees C

SOURCE Toshiba America Electronic Components, Inc.